tsm6968sd 20v dual n - channel mosfet w/esd protected 1 / 6 version: e 07 tssop - 8 features advance trench process technology high density cell design for ultra low on - resistance esd protect 2kv application specially designed for li - on battery packs battery switch application ordering information part no. pa ckage packing tsm6968sdca rv tssop - 8 3kpcs / 13 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 12 v continuous drain current, v gs @4.5v. i d 6 .5 a p ulsed drain current, v gs @4.5v i dm 30 a continuous source current (diode conduction) a,b i s 1.4 a ta = 25 o c 1 . 0 4 maximum power dissipation ta = 75 o c p d 0. 6 25 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to foot (drain) thermal resistance r? jf 83 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 1 20 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. produc t summary v ds (v) r ds(on) (m) i d (a) 22 @ v gs = 4.5v 6.5 20 29 @ v gs = 2.5v 5.5 block diagram dual n - channel mosfet pin definition : 1. drain 1 8. drain 2 2. source 1 7. source 2 3. source 1 6. source 2 4. gate 1 5. gate 2
tsm6968sd 20v dual n - channel mosfet w/esd protected 2 / 6 version: e 07 electrical specifications ( ta = 25 o c unless otherwise note d ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 0.6 0.8 1.0 v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 10 ua zer o gate voltage drain current v ds = 16v, v gs = 0v i dss -- -- 1.0 ua on - state drain current v ds =5v, v gs = 4.5v i d(on) 30 -- -- a v gs = 4.5v, i d = 6. 5 a -- 15 22 drain - source on - state resistance v gs = 2.5v, i d = 5. 5 a r ds(on) -- 20 29 m forward transconductance v ds = 10v, i d = 6.5a g fs -- 30 -- s diode forward voltage i s = 1.7a, v gs = 0v v sd -- 0.6 1.2 v dynamic b total gate charge q g -- 15 20 gate - source char ge q gs -- 3.4 -- gate - drain charge v ds = 10v, i d = 6 .5 a, v gs = 4.5v q gd -- 1.2 -- nc input capacitance c iss -- 950 -- output capacitance c oss -- 450 -- reverse transfer capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c rss -- 135 -- pf switching c turn - on delay time t d(on) -- 140 200 turn - on rise time t r -- 210 250 turn - off delay time t d(off) -- 3700 4800 turn - off fall time v dd = 10v, r l = 10 , i d = 1a, v gen = 4.5v, r g = 6 t f -- 2000 2600 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subje ct to production testing. b. switching time is essentially independent of operating temperature.
tsm6968sd 20v dual n - channel mosfet w/esd protected 3 / 6 version: e 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm6968sd 20v dual n - channel mosfet w/esd protected 4 / 6 version: e 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pul se power normalized thermal transient impedance, junction - to - ambient
tsm6968sd 20v dual n - channel mosfet w/esd protected 5 / 6 version: e 07 tssop - 8 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec ) l = lot code tssop - 8 dim ension millimeters inches dim min max min max a 6.20 6.60 0.244 0.260 a 4.30 4.50 0.170 0.177 b 2.90 3.10 0.114 0.122 c 0.65 (typ) 0.025 (typ) d 0.25 0.30 0.010 0.019 e 1.05 1.20 0.041 0.049 e 0.05 0.15 0.002 0.009 f 0.127 0.005 l 0.50 0.70 0.020 0.028
tsm6968sd 20v dual n - channel mosfet w/esd protected 6 / 6 version: e 07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies . information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk an d agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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